Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrO<inf>x</inf>/GdO<inf>x</inf>/W cross-point memories

Jana, D.D.JanaMaikap, S.S.MaikapPrakash, A.A.PrakashChen, Y.-Y.Y.-Y.ChenChiu, H.-C.H.-C.ChiuYang, J.-R.J.-R.YangJER-REN YANG2020-05-122020-05-122014https://scholars.lib.ntu.edu.tw/handle/123456789/491555Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrO<inf>x</inf>/GdO<inf>x</inf>/W cross-point memoriesjournal article10.1186/1556-276X-9-122-s2.0-84892558039https://www.scopus.com/inward/record.uri?eid=2-s2.0-84892558039&doi=10.1186%2f1556-276X-9-12&partnerID=40&md5=c6674f2be30dafba67ad38c8ff8a2190