Meng, C.-Y.C.-Y.MengShih, B.-L.B.-L.ShihSI-CHEN LEE2020-06-112020-06-11200713880764https://scholars.lib.ntu.edu.tw/handle/123456789/498719https://www.scopus.com/inward/record.uri?eid=2-s2.0-34248994318&doi=10.1007%2fs11051-005-4631-1&partnerID=40&md5=a4c9c233842f9cb081c4c0d7c4fd2089The fabrication of Si nanowires has been demonstrated using excimer laser annealed thin gold film as the catalyst and vapor-liquid-solid (VLS) growth. Au nanoparticles with mean diameters of 12, 13 and 15 nm were formed by excimer laser annealing (ELA) of Au film with thickness of 2.5, 5 and 10 nm, respectively. The results show that the silicon nanowires (SiNWs) with desired diameter can be obtained by controlling the Au film thickness and laser power density. © 2006 Springer.Excimer laser annealing; Gold film; Nanoparticle; Silicon nanowireAnnealing; Excimer lasers; Film growth; Nanowires; Silicon; Synthesis (chemical); Thin films; Excimer laser annealing (ELA); Silicon nanowires; Thin gold films; Gold; gold; nanowire; silicon; article; catalyst; excimer laser; film; liquid; particle size; priority journal; solid state; synthesis; thickness; vaporjournal article10.1007/s11051-005-4631-12-s2.0-34248994318