GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Su, Vin CentVin CentSuChen, Po HsunPo HsunChenChen, Yen PuYen PuChenLee, Ming LunMing LunLeeYou, Yao HongYao HongYouHung, Zheng HungZheng HungHungHsu, Ta ChengTa ChengHsuLin, Yu YaoYu YaoLinLin, Ray MingRay MingLinCHIEH-HSIUNG KUAN2023-06-012023-06-012016-01-019781557528209https://scholars.lib.ntu.edu.tw/handle/123456789/631684By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substratesconference paper2-s2.0-85136353414https://api.elsevier.com/content/abstract/scopus_id/85136353414