Hwang, Jih-ShangJih-ShangHwangLee, Chung-HanChung-HanLeeYang, Fuh-HsiangFuh-HsiangYangChen, Kuei-HsienKuei-HsienChenHwa, Luu-GenLuu-GenHwaYING-JAY YANGLI-CHYONG CHEN2018-09-102018-09-102001-1102540584http://scholars.lib.ntu.edu.tw/handle/123456789/294638https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035500476&doi=10.1016%2fS0254-0584%2801%2900455-2&partnerID=40&md5=bfb2c91106e95e48345190a23a29f8e6Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within 1 °C. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540°C). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal. © 2001 Elsevier Science B.V. All rights reserved.Electron microscopy; MOCVD; Nitrides; Optical propertiesIndium compounds; Metallorganic chemical vapor deposition; Photoluminescence; Raman spectroscopy; Scanning electron microscopy; Transmission electron microscopy; X ray diffraction analysis; Indium nitride; Semiconducting filmsjournal article10.1016/S0254-0584(01)00455-22-s2.0-0035500476WOS:000171822100040