CHIH-I WUTsai, M.-L.M.-L.TsaiSu, S.-H.S.-H.SuChang, J.-K.J.-K.ChangTsai, D.-S.D.-S.TsaiChen, C.-H.C.-H.ChenWu, C.-I.C.-I.WuLi, L.-J.L.-J.LiChen, L.-J.L.-J.ChenHe, J.-H.J.-H.HeCHIH-I WU2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84906652964&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/387679We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.2D material; chemical vapor deposition; heterojunction solar cell; molybdenum disulfide; monolayer[SDGs]SDG7Chemical vapor deposition; Efficiency; Electric fields; Heterojunctions; Layered semiconductors; Molybdenum compounds; Monolayers; Silicon; Silicon compounds; Solar power generation; Sulfur compounds; Transition metals; Built-in electric fields; Heterojunction photovoltaic devices; Heterojunction solar cells; Molybdenum disulfide; Photogenerated carriers; Power conversion efficiencies; Transition metal dichalcogenides; Type II hetero junctions; Silicon solar cellsjournal article10.1021/nn502776h