Reducing the critical switching current in the free layer of magnetic random access memory

Yang, Jyh-ShinnJyh-ShinnYangCHING-RAY CHANG2019-12-192019-12-1920060304-8853https://scholars.lib.ntu.edu.tw/handle/123456789/436581[SDGs]SDG7Reducing the critical switching current in the free layer of magnetic random access memoryjournal article10.1016/j.jmmm.2006.02.022WOS:000207211700095