Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

JENN-GWO HWU2018-09-102018-09-101990http://www.scopus.com/inward/record.url?eid=2-s2.0-0025544507&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/288949Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage techniquejournal article10.1016/0022-3697(90)90130-8