Chen C.-CLin Y.-RLin Y.-WSu Y.-CChen C.-CHuang T.-CWu P.-HYang C.CMou SAverett K.L.CHIH-CHUNG YANG2022-04-252022-04-2520212072666Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85111357780&doi=10.3390%2fmi12070835&partnerID=40&md5=31082ad396d7e455ffe68b21447eddc6https://scholars.lib.ntu.edu.tw/handle/123456789/607017Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/undoped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland.Alternating-layer structureHole mobilityMg dopingP-type AlGaNSheet resistanceAluminum gallium nitrideGallium nitrideIII-V semiconductorsMolecular beam epitaxySemiconductor alloysAl contentAlGaN layersAlternating layersDifferent layersDoped layersIonized impurity scatteringLayer structuresMg-dopingMagnesium alloysjournal article10.3390/mi120708352-s2.0-85111357780