Lu B.-ZWang YWu Y.-CChiong C.-CHUEI WANG2021-09-022021-09-02202015311309https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088023305&doi=10.1109%2fLMWC.2020.2993852&partnerID=40&md5=55268654e2f3ba3b5595dbc439f92b6dhttps://scholars.lib.ntu.edu.tw/handle/123456789/580888An ultralow-power K-band low-noise amplifier (LNA) for next generation radio astronomical receivers fabricated in 65-nm CMOS technology is presented in this letter. A gate-source transformer feedback is utilized for the simultaneous noise and impedance matching. In order to achieve high gain with limited dc power consumption (P dc), a single-ended neutralization technique is applied to the circuit. According to measurement, the proposed K-band LNA achieves a 19.1-dB small signal gain with 2.8-GHz 3-dB bandwidth (21.2-24 GHz) and noise figure of 3.6 dB with only 0.99 mW P dc. To the best of author's knowledge, this LNA shows the highest figure of merit (FoM), which is 7071 1/W, among published K-band low-power LNAs. ? 2001-2012 IEEE.CMOS integrated circuits; Noise figure; CMOS processs; CMOS technology; DC power consumption; Figure of merit (FOM); Radio-astronomical receivers; Small signal gain; Transformer feedback; Ultra-low power; Low noise amplifiersjournal article10.1109/LMWC.2020.29938522-s2.0-85088023305