2008-04-222024-05-14https://scholars.lib.ntu.edu.tw/handle/123456789/658000摘要：在矽基(Silicon-Based)晶片製程技術的相對成熟等因素帶動下，使得用高密度化整合之積體電路元件的成本大幅降低。若能有效利用矽積體電路製造工業優勢整合光元件與電元件，將使得光子晶片系統得以實現。 本計畫目的主要是運用矽的奈米結構能打破間接能隙低復合量子效率限制，而有效提升發光效率為基礎，發展透明導電氧化物電極與表結構修飾於新穎陣&#63900;式奈米摻鉺矽基發光元件。研究方向將從奈米摻鉺矽基陣&#63900;結構研究、摻鉺氧化鋅(Er-ZnO,EZO)透明導電薄膜電極製備、奈米摻鉺矽基陣&#63900;元件建構、奈米摻鉺矽基元件之表結構修飾及新穎摻鉺氧化鋅陣&#63900;元件開發為主。計畫探討議題將包含有反應性離子蝕刻技術與化學法製造不同密度之高深寬比之&#63756;米柱/錐結構，同時研究此一糙化表面的光學與為結構特性，隨後我們也比較不同糙化之透明導電氧化物薄膜電極材料之、表面、光激發與電激發光譜分析等物理特性，此外也針對奈米摻鉺矽基陣&#63900;結構與新穎EZO陣&#63900;結構之Fowler-Nordheim穿隧效應、電荷儲存效應等現象研究，企圖了解奈米結構元件於發光態下電子傳輸轉換所扮演的角色並建立最佳化製程參數，同時提供矽基發光元件製程與奈米半導體科技領域重要知識與經驗。 <br> Abstract: Driving in the relatively ripe factor of silicon-based microelectronic integrated circuits (ICs) process technology, the cost of ICs component may cut down quite substantially by using the high density to combine. If we can effectively utilize silicon ICs advantage of process technology to combine the photoelectric component, the photonic-chip system will be realized. In this project, the purpose is major using slicon nano structure to develop novel erbium-doped slicon(Er-Si) nanocrystal-based light emitting devices with transparent conductive oxide (TCO) contacts and surface structure modifications, which can break indirectness energy gap (Eg) of low compound quantum efficiency limitation, and give out light efficiency effectively. Our direction will plan to study the structure of Er-Si array nanocrystal-based, preparation of Er-doped ZnO (EZO) TCO contacts, fabrication of Er-Si array nanocrystal-based devices, surface structure modification of Er-Si array nanocrystal - based devices, and novel EZO array devices. The research subject will include microstructure, surface, PL, EL, and other physical properties of the different density of the nano-rod/pyramid with high aspect-ratio, EZO contacts, and novel EZO array. Furthermore, we also focus on investigation of Fowler-Nordheim tunneling effect and charging effect of Er-Si array structure and novel EZO array structure. We attempted to understand about the nano structure device, which performed in the role of electrics transmission conversion at luminescence state, and established the optimum process conditions; moreover, providing the important knowledge and experience for slicon-based light emitting devices and field of nano ICs science and technology.矽基發光元件透明導電氧化物電極表面奈米糙化結構Novel Erbium-Doped Silicon Nanocrystal-Based Light Emitting Devices with Transparent Conductive Oxide Contacts and Surface Nano-Roughened Structure