Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments

胡振國Lin, J. J.J. J.LinHwu, Jenn-GwoJenn-GwoHwu2009-04-272018-07-062009-04-272018-07-061990http://ntur.lib.ntu.edu.tw//handle/246246/154310en-USDramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatmentsconference paper