Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter

Dept. of Electr. Eng., National Taiwan Univ.Kuo, J.B.J.B.KuoSim, J.H.J.H.SimKuoJB2007-04-192018-07-062007-04-192018-07-061993-05http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032366application/pdf190786 bytesapplication/pdfen-USAccumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverterjournal article10.1109/VTSA.1993.263596http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032366/1/00263596.pdf