Cross-point resistive switching memory and urea sensing by using annealed GdO<inf>x</inf> film in IrO<inf>x</inf>/GdO<inf>x</inf>/W structure for biomedical applications

Kumar, P.P.KumarMaikap, S.S.MaikapGinnaram, S.S.GinnaramQiu, J.-T.J.-T.QiuJana, D.D.JanaChakrabarti, S.S.ChakrabartiSamanta, S.S.SamantaSingh, K.K.SinghRoy, A.A.RoyJana, S.S.JanaDutta, M.M.DuttaChang, Y.-L.Y.-L.ChangCheng, H.-M.H.-M.ChengMahapatra, R.R.MahapatraChiu, H.-C.H.-C.ChiuYang, J.-R.J.-R.YangJER-REN YANG2020-05-122020-05-122017https://scholars.lib.ntu.edu.tw/handle/123456789/491524Cross-point resistive switching memory and urea sensing by using annealed GdO<inf>x</inf> film in IrO<inf>x</inf>/GdO<inf>x</inf>/W structure for biomedical applicationsjournal article10.1149/2.1011704jes2-s2.0-85019055624https://www.scopus.com/inward/record.uri?eid=2-s2.0-85019055624&doi=10.1149%2f2.1011704jes&partnerID=40&md5=45adb903eedb678843dd73f156be3bca