A derivative of oxadiazole used as the host of the metal doped electron transport layer material

Wu, Meng-HsiuMeng-HsiuWuJIUN-HAW LEEMAN-KIT LEUNGHsu, Yu-NuYu-NuHsuHu, Pier-JyPier-JyHuChu, BennetBennetChuChang, YihYihChang2011-08-232018-07-052011-08-232018-07-052005http://ntur.lib.ntu.edu.tw//handle/246246/236782https://www.scopus.com/inward/record.uri?eid=2-s2.0-33644641753&partnerID=40&md5=14683d92917207c65b3557e62795fd1dIn this paper, we report a new host material used as the host of electron transport layer (ETL) for metal dopant (MD) technique. This host material exhibits high Tg and good thermal stability. The average roughness of the thin film is quite small as compared with other derivatives it helps to reduce the leakage current.en-USDoping (additives); Electron transitions; Leakage currents; Surface roughness; Thermodynamic stability; Thin films; Electron transport layer (ETL); Metal dopant (MD); Oxadiazole; Sulfur compoundsA derivative of oxadiazole used as the host of the metal doped electron transport layer materialconference paper2-s2.0-33644641753