The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

J. M. LinL. C. ChouHAO-HSIUNG LIN2018-09-102018-09-102010-05http://scholars.lib.ntu.edu.tw/handle/123456789/359141The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxyconference paper10.1109/iciprm.2010.55163372-s2.0-77955961770