Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Yeh, P.-C.P.-C.YehLin, Y.-W.Y.-W.LinHuang, Y.-L.Y.-L.HuangHung, J.-H.J.-H.HungLin, B.-R.B.-R.LinYang, L.L.YangWu, C.-H.C.-H.WuWu, T.-K.T.-K.WuWu, C.-H.C.-H.WuCHAO-HSIN WULUNG-HAN PENG2020-06-112020-06-112015https://scholars.lib.ntu.edu.tw/handle/123456789/499526Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxidesjournal article10.7567/APEX.8.0841012-s2.0-84938632930https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938632930&doi=10.7567%2fAPEX.8.084101&partnerID=40&md5=03338a282af51affe5ba930f9195c03a