The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al <inf>2</inf>O <inf>3</inf> buffer layer

Liu, W.-R.W.-R.LiuLin, B.H.B.H.LinYang, S.S.YangKuo, C.C.C.C.KuoLi, Y.-H.Y.-H.LiHsu, C.-H.C.-H.HsuHsieh, W.F.W.F.HsiehLee, W.C.W.C.LeeMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272012https://scholars.lib.ntu.edu.tw/handle/123456789/443349The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al <inf>2</inf>O <inf>3</inf> buffer layerjournal article10.1039/c2ce06218f2-s2.0-84863160998https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863160998&doi=10.1039%2fc2ce06218f&partnerID=40&md5=076ff481e22fb45501a4b4bf4e1721a1