Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layer

Liang-Yu SuFinella LeeJian Jang HuangJIAN-JANG HUANG2018-09-102018-09-102014http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000330620600031&KeyUID=WOS:000330620600031http://scholars.lib.ntu.edu.tw/handle/123456789/387194Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layerjournal article10.1109/TED.2013.2294337