林浩雄臺灣大學：電子工程學研究所嚴秉廉Ynn, Bing-LienBing-LienYnn2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57682在本篇論文中，我們分別討論870nm共振腔發光二極體的研製及其特性分析。在3.89% duty cycle 400mA的操作條件下，元件的最大發光強度為42.5mW，相對應的wall plug efficiency可達到6%。 我們採用金屬有機化學汽相沉積 (MOCVD) 的方式，在(100)指向的砷化鎵基板成長元件結構。本元件採用砷化鋁鎵的布拉格反射器作為共振腔的上下反射層，其中下層週數為30週，元件的主動層則為砷化銦鎵的量子井，另外為了增加元件的發光強度，亦設計使用5In this thesis, fabrication and characterization of resonant cavity light emitting diodes operated atContents 中文摘要………..……………………………………………………………….…… 4 Abstract………..………………………………………………………………………. 5 Contents………..……………………………………………………………………… 6 Table Captions………..……………………………………………………………… 8 Figure Captions………..………………………………………………………… 9 Chapter 1 Introduction………………..…………………………....................... 12 Chapter 2 Fabrication and Characterization of the RCLED…………..… 16 2.1 RCLED structure………………………………………….………….. 16 2.2 Relation between the Fabry-Perot mode and the quantum well mode…………………………………………………………………... 18 2.3 Diode Fabrication Process………………………………………….. 20 2.4 Measurement……………………………………............................. 21 2.4.1 Current-voltage measurement………………….......................... 21 2.4.2 Light-intensity current (L-I) measurement………....................... 21 2.4.3 Electroluminescence(EL) spectrum measurement…………….. 22 2.4.4 Far-field pattern measurement…………………………………… 22 2.4.5 Transient behavior measurement………………………………... 23 Chapter 3 Experimental Results and Discussion………………………... 36 3.1 Oxidation data analysis using the Deal & Grove mode…………... 36 3.2 Current-Voltage and Light power-Injection current (L-I) relationship……………………….………………. 39 3.3 Electroluminescence (EL) spectrum……………………………….. 43 3.4 Far-field pattern…………………………………….......................... 44 3.5 Transient behavior……………………………………………………. 46 Chapter 4 Conclusion…………………………………………………………..... 67 Reference……………...………………………………………………...………….... 681267873 bytesapplication/pdfen-US共振腔發光二極體高必v氧化RCLEDoxidationhigh powerthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57682/1/ntu-93-R91943106-1.pdf