Wu, Yu-JuiYu-JuiWuChiang, Chih-YingChih-YingChiangTsao, Hung-YuHung-YuTsaoLin, Min-JuiMin-JuiLinHsieh, Pu-JiaPu-JiaHsiehYeh, Ching-ChenChing-ChenYehSyong, Wei-RenWei-RenSyongHsu, Kai-SyangKai-SyangHsuCHI-TE LIANGChen, Jeng-ChungJeng-ChungChenJIUN-YUN LI2021-07-282021-07-282021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108149692&doi=10.1109%2fVLSI-TSA51926.2021.9440109&partnerID=40&md5=6964a82130f10f92f501bd7be3a2f721https://scholars.lib.ntu.edu.tw/handle/123456789/573419In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing subthreshold swing and an increasing threshold voltage as the temperature is reduced. Clear quantum oscillations of the QD conductance due to Coulomb blockade are demonstrated at 1.5 K. ? 2021 IEEE.CMOS integrated circuits; Coulomb blockade; MOSFET devices; Nanocrystals; Quantum computers; Semiconductor quantum dots; Threshold voltage; VLSI circuits; Measurements of; nMOSFETs; Quantum Computing; Quantum oscillations; Subthreshold swing; Siliconconference paper10.1109/VLSI-TSA51926.2021.94401092-s2.0-85108149692