王暉臺灣大學：電信工程學研究所王多柏Wang, To-PoTo-PoWang2007-11-272018-07-052007-11-272018-07-052007http://ntur.lib.ntu.edu.tw//handle/246246/58730本論文主要是設計與分析以矽單晶製程的低相位雜訊振盪器與低功率的振盪器及混波器。 在此論文中，我們量測了製作於CMOS製程上的微機電電感，並且研究了品質因素(Q)值的改善現象，這些微機電電感的自振頻率皆超過X頻段。我們用不同圈數的電感做實驗，從實驗的結果可以觀察到：經由並聯第一層金屬到第四層金屬，以及降低電感與矽基板之間的寄生電容，可以改善電感的Q值。在這個研究中，電感的品質因素(Q)值最多可以被改善107%，而且量測到的微機電電感的自振頻率皆超過30 GHz。 接著利用0.35-μm CMOS 製程設計一個使用微機電電感的22-GHz 的雙推式振盪器，和其他最近發表的20-GHz 製作在矽製程上的振盪器比較起來，這個使用微機電電感的22-GHz 的雙推式振盪器可以達到比較低的相位雜訊和比較好的指標 (Figure-of-Merit) 。和使用一般電感的振盪器比起來，這個使用微機電電感的振盪器可以有大約6-dB 的相位雜訊改善。這個電路製作在便宜的製程上，亦展示了低相位雜訊，這也是第一個利用0.35-μm CMOS 製程，振盪頻率超過20 GHz 的振盪器。 因為台積電的0.35-μm CMOS 製程並沒有提供具有高介電常數的電容，所以在22-GHz 的雙推式振盪器設計上，是使用第四層金屬和第三層金屬來設計電容，但是會有大的寄生電容位於電容下板和矽基板之間，造成不夠好的基頻頻率(fo)抑制。為了改善此現象，我們利用0.35-μm CMOS 製程設計一個使用微機電電感的30-GHz 的雙推式振盪器，使用電晶體的寄生電容來代替共振腔 堛 (Metal-Insulator-Metal)金屬-絕緣體-金屬電容。和其他最近發表的30-GHz製作在矽製程上的振盪器比較起來，使用微機電電感的30-GHz 的雙推式振盪器可以達到比較低的相位雜訊和比較好的指標 (Figure-of-Merit) ，和使用一般電感的振盪器比起來，這個使用微機電電感的振盪器可以有大約5.1-dB 的相位雜訊改善，並且增加了基頻頻率(fo)抑制。 接著我們提出新的回授架構來改善X 頻段雙推式振盪器的相位雜訊，使用適當的回授相位延遲和高的電晶體轉導來改善振盪器的相位雜訊。在此論文中，振盪器的振幅和相位穩定現象都有分析，相位雜訊降低過程也有推導，而且元件選擇也有分析；另外我們也使用隨時間變化的函數來分析相位雜訊的降低。這個自注入的雙推式振盪器達到在距離9.6-GHz 的載波頻率，位移1 MHz 處有-120.1 dBc/Hz 的低相位雜訊。 最後，我們利用0.18-μm CMOS 製程設計一個降頻的雙平衡振盪混波 器。這個電路架構包含了一個混波器和振盪器，混波器是疊在振盪器上，這個堆疊架構允許全部的混波器電流被振盪器利用。與分開的混波器和振盪器架構比起來，此堆疊架構的電流消耗量比較小。和最近發表的矽製程上的自振混波器比起來，這個振盪混波器需要較低的操作電壓；和最近發表的矽製程低功率混波器比起來，位於振盪混波器 堛熔V波器達到較低的功率消耗。Research on the development of Si-based low phase-noise oscillator and the low-power oscillator mixer is presented in this dissertation. In this dissertation, the measured micromachined inductors and the equivalent circuit models above X-band on low resistivity silicon substrate (33 Ω-cm) with improved quality factors are investigated. The experimental results obtained for different-turns inductors show that the inductors quality factor can be improved after shunting metal from metal1 to metal4 and reducing the parasitic capacitance between the inductors and the lossy Si-substrate. In this work, it is observed the quality factor can be improved up to 107%. The measured self-resonance frequencies of the micromachined inductors are above 30 GHz. A 22-GHz push-push oscillator using micromachined inductors is implemented in TSMC 0.35-μm CMOS technology. Compared with the recently reported performance of Si-based VCOs around 20 GHz, the low phase-noise 22-GHz oscillator with better Figure-of-Merit (FOM) is obtained by using the micromachined inductors. This phase noise is about 6-dB phase noise improvement from the free-running oscillator with regulator inductors. The fundamental rejection is 18 dB. This chip was fabricated in a low-cost process while demonstrating the low phase noise. This chip is also the first 0.35-μm CMOS oscillator with oscillating frequency over 20 GHz. In order to improvement the fundamental rejection of the 22-GHz push-push oscillator. Another 30-GHz low-phase-noise 0.35-μm push-push oscillator using micromachined inductors is also developed and implemented in 0.35-μm CMOS technology. The parasitic capacitor of the nMOS devices service as the capacitor in the LC tank. Compared with the recently reported performance of Si-based VCOs around 30 GHz, a low phase-noise 30-GHz VCO with better FoM and higher output power is obtained by using the micromachined inductors. The measured result demonstrates about 5.1-dB phase noise improvement is achieved compared with the free-running VCO with regular inductors. The fundamental rejection is improved 12 dB from the 22-GHz push-push oscillator. Regarding the phase noise reduction, a low phase-noise X-band push-push oscillator using proposed feedback topology is presented. By using the proper phase delay in the feedback loop and high transconductance of the current source, a low phase-noise oscillator is achieved. The amplitude stability and phase stability are analyzed, the phenomena of the phase noise reductions are derived, and the device-size selections of the oscillator are investigated. The time-variant function, impulse sensitivity function, is also adopted to analyze the phase noise reductions. This self-injected push-push oscillator achieves low phase noise of -120.1 dBc/Hz at 1-MHz offset from the 9.6-GHz carrier. It is also the first attempt to analyze the second-harmonic self-injected push-push oscillator. 1-MHz offset from the 9.6-GHz carrier. It is also the first attempt to analyze the second-harmonic self-injected push-push oscillator. Finally, a downconversion double-balanced oscillator mixer using 0.18-μm CMOS technology is proposed. This oscillator mixer consists of an individual mixer stacked on a voltage-controlled oscillator (VCO). The stacked structure allows entire mixer current to be reused by the VCO cross-coupled pair to reduce the total current consumption of the individual VCO and mixer. This oscillator mixer requires a lower supply voltage and achieves a higher operating frequency among recently reported Si-based self-oscillating mixers. The mixer in this oscillator mixer also achieves a low power consumption compared with recently reported low-power mixer.Chapter 1 Introduction…..……………………………………………1 1.1 Research Motivation……………………………………………….1 1.2 Literature Survey…………………………………….…………….2 1.3 Contributions………………………………………………………5 1.4 Dissertation Organizations………………………………………....7 Chapter 2 Low Phase-Noise Push-Push Oscillators Using Micromachined Inductors…………………………….…..9 2.1 Inductors on Silicon Substrate……………………………………11 2.1.1 Eddy-Current Loss………………………………………….11 2.1.2 Capacitively Coupled Loss…………………………………13 2.1.3 Metal Resistive Loss…………………………………….….14 2.2 Characterization of inductors……………………………………..16 2.3 Micromachined Inductors………………………………….……..22 2.3.1 Overview……………………………………………………22 2.3.2 Micromachined Process.……………………………………23 2.3.3 Inductor Design……………………………………….…….25 2.3.4 Measured Results…………………………………………...28 2.3.5 Performance Summary……………………………………...34 2.4 Push-Push Oscillator Concept…………………………………….36 2.4.1 Push-Push Oscillator………………………………………..36 2.4.2 Mode Analysis of Push-Push Oscillator……………………37 2.5 A 22-GHz Push-Push CMOS Oscillator Using Micromachind Inductors………………………………………………………….39 2.5.1 Technology Description…………………………………….39 2.5.2 LC Tank in the Oscillator…………………………………...41 2.5.3 Oscillator Design…………………………………………...43 2.5.4 Measured Results…………………………………….……..46 2.5.5 Performance Summary……………………………………..50 2.6 A 30-GHz Low-Phase-Noise 0.35-μm Push-Push Oscillator Using Micromachined Inductors………………………………………...51 2.6.1 Motivation of This Work……………………………………51 2.6.2 LC Tank.…...………………………………………………..52 2.6.3 Circuit Design………………………………………………53 2.6.4 Measured Results…………………………………………...57 2.6.5 Performance Summary…………………………….………..62 Chapter 3 Phase-Noise Reduction of X-Band Push-Push Oscillator with Second-Harmonic Self-Injection Techniques……..63 3.1 Overview………………………………………………………….64 3.2 Stability Conditions and Phase-Noise Analysis of the Proposed Circuit Topology………………………………………………….68 3.2.1 Amplitude Stability Analysis……………………………….68 3.2.2 Phase Stability Analysis…………………………………….73 3.2.3 Phase-Noise Reduction of the Self-Injected Push-Push Oscillator……………………………………………...……75 3.2.4 1/f Noise Upconversion in Second-Harmonic Self-Injected Push-Push scillator…………………………………..……..80 3.3 Circuit Design…………………………………………………….83 3.3.1 Technology Description…………………………………….83 3.3.2 Oscillator Topology and Phase-Delay Loop Consideration...84 3.3.3 MOS Device Size Consideration…………………………...86 3.3.4 Inductor Consideration……………………………….……..90 3.4 Experimental Results……………………………………………..91 3.5 Conclusion.............................................................................…...104 Chapter 4 A Low-Power Oscillator Mixer in CMOS Technology..105 4.1 Literature Survey………………………………………………..106 4.2 Principle of Circuit Operation…………………………………..111 4.3 Oscillator-Mixer Conversion Gain Analysis…………………….117 4.4 Noise Figure of the Oscillator Mixer……………………………119 4.5 Linearity of the Oscillator Mixer………………………………..121 4.6 Current Reuse in Oscillator Mixer………………………………124 4.7 Circuit Performance……………………………………………..126 4.8 Summary……………………………………………...…………133 Chapter 5 Conclusions……………………………………………...135 References……………………………………………………………139 Publications List…………………………………………………….1542957655 bytesapplication/pdfen-US低相位雜訊振盪器低功率的振盪器及混波器Low Phase-Noise OscillatorLow-Power Oscillator Mixerthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/58730/1/ntu-96-D92942001-1.pdf