The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits

Liao, M.-H.M.-H.LiaoMING-HAN LIAO2020-01-132020-01-132013https://scholars.lib.ntu.edu.tw/handle/123456789/447961The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuitsjournal article10.1088/0022-3727/46/49/4951032-s2.0-84890287478https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890287478&doi=10.1088%2f0022-3727%2f46%2f49%2f495103&partnerID=40&md5=82eea56a8edf24f5194bce32d0edea80