Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2

Chang, PPChangLee, WCWCLeeHuang, MLMLHuangLee, YJYJLeeMINGHWEI HONGKwo, JJKwo2018-09-102018-09-102010http://scholars.lib.ntu.edu.tw/handle/123456789/357467Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2journal article