CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects

Y. S. LinC. H. LinJ. B. KuoK. W. SuJAMES-B KUO2018-09-102018-09-102005-12http://scholars.lib.ntu.edu.tw/handle/123456789/317642[SDGs]SDG7CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effectsconference paper10.1109/EDSSC.2005.16352142-s2.0-43549123024