Liu C.-YChuang YTai C.-TKao H.-STien K.-YJIUN-YUN LI2022-04-252022-04-25202110994742https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124417914&doi=10.1109%2fSUM48717.2021.9505847&partnerID=40&md5=ac171e2685879e9a9d78d6d9ea422fa9https://scholars.lib.ntu.edu.tw/handle/123456789/607229GeSn is a promising material for high-performance electronic and photonic devices. In this work, we present our recent achievements on high electron mobility in GeSn n-MOSFETs, an extremely low contact resistivity in metal/n-GeSn junctions, and a high tunneling current density in GeSn Esaki diodes with large peak-to-valley current ratios. Last, we present the first two-dimensional hole gas in the undoped GeSn/Ge heterostructures with strong spin-orbit coupling (SOC) effects, which is tunable by top gating. ? 2021 IEEE.ComponentFormattingInsertStyleStylingPhotonic devicesSemiconductor alloysSi-Ge alloysTin alloysElectronic spinsElectronics devicesPerformancePhotonics devicesSpin-orbit couplingsMOSFET devicesconference paper10.1109/SUM48717.2021.95058472-s2.0-85124417914