Dai, J.-H.J.-H.DaiLee, J.-H.J.-H.LeeLin, Y.-L.Y.-L.LinSI-CHEN LEE2020-06-112020-06-11200800214922https://scholars.lib.ntu.edu.tw/handle/123456789/498866https://www.scopus.com/inward/record.uri?eid=2-s2.0-54249155124&doi=10.1143%2fJJAP.47.2924&partnerID=40&md5=0a2e84ef1f5161dacdfef9e5ae07962aThe In(Ga)As quantum ring infrared photodetector (QRIP) were investigated. The quantum ring (QR) is transformed from 500°C grown 2.2 ML quantum dot (QD) with QD annealing time ∼30 s. The QRs show the broad PL spectrum which is blue shifted from QD about 100meV. The resultant QRIP is a broadband terahertz detector. The response extends from 3 to 100THz with peak responsivity of 127 mA/W at 23 μm which has a spectral detectivity of 2.3 × 10 11 cmHz1/2/W at 10 K under 1.2 V bias. © 2008 The Japan Society of Applied Physics.Far-infrared; Quantum dots; Quantum rings; Terahertz detectorAnnealing; Detectors; Gallium; Indium arsenide; Nanorings; Nanostructures; Optical waveguides; Optoelectronic devices; Quantum electronics; Annealing times; Broadband terahertz; Detectivity; Far-infrared; Infrared photodetectors; Peak responsivity; PL spectrums; Quantum dot; Quantum dots; Quantum ring; Quantum rings; Spectral; Terahertz detector; Terahertz detectors; Semiconductor quantum dotsjournal article10.1143/JJAP.47.29242-s2.0-54249155124