Utilizing Ge interlayer and patterned substrate to improve the contact resistance of n-GaN

Liao, T.-W.T.-W.LiaoChiu, C.-W.C.-W.ChiuKuan, C.-H.C.-H.KuanHuang, T.-Y.T.-Y.HuangYang, T.-Y.T.-Y.YangCHIEH-HSIUNG KUAN2018-09-102018-09-102016http://www.scopus.com/inward/record.url?eid=2-s2.0-84971254832&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/396526Utilizing Ge interlayer and patterned substrate to improve the contact resistance of n-GaNconference paper10.1109/INEC.2014.7460449