Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

Shiojiri, M.M.ShiojiriChuo, C.C.C.C.ChuoHsu, J.T.J.T.HsuYang, J.R.J.R.YangSaijo, H.H.SaijoJER-REN YANG2020-05-122020-05-122006https://scholars.lib.ntu.edu.tw/handle/123456789/491645Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layersjournal article10.1063/1.21805322-s2.0-33645920309https://www.scopus.com/inward/record.uri?eid=2-s2.0-33645920309&doi=10.1063%2f1.2180532&partnerID=40&md5=71054b4b1e99b4ec32c1ae8b9c7387fc