Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric

Chang, W.H.W.H.ChangChiang, T.H.T.H.ChiangWu, Y.D.Y.D.WuMINGHWEI HONGLin, C.A.C.A.LinKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443376[SDGs]SDG7Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectricjournal article10.1116/1.35650572-s2.0-84905950002https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905950002&doi=10.1116%2f1.3565057&partnerID=40&md5=95c36b59edc071f927494ae4a9c1f2a7