Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy

Wang, J.-S.J.-S.WangLin, H.-H.H.-H.LinSung, L.-W.L.-W.SungHAO-HSIUNG LIN2020-06-112020-06-111998https://scholars.lib.ntu.edu.tw/handle/123456789/500436Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxyjournal article10.1109/3.7202332-s2.0-0032187582https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032187582&doi=10.1109%2f3.720233&partnerID=40&md5=ffda9f3482d75d05a971732b43b412ad