郭正邦臺灣大學：電子工程學研究所林嵩鈞Lin, Song-JunSong-JunLin2007-11-272018-07-102007-11-272018-07-102005http://ntur.lib.ntu.edu.tw//handle/246246/57388本論文中提出了低溫多晶矽薄膜電晶體的電流突增效應(Kink Effect)之DC直流與AC交流分析。 第一章對於顯示器技術將來以及現在之趨勢，簡單介紹低溫多晶矽薄膜電晶體元件結構以及電流突增效應。 第二章提出一個可供電路模擬之用，以物理基準的低溫多晶矽薄膜電晶體電流分析模型。且利用製程元件模擬軟體為Tsuprem4，以及二維元件模擬軟體MEDICI來分析元件參數對DC直流的Kink Effect之影響。 第三章提出一個可供電路模擬之用，以物理基準的低溫多晶矽薄膜電晶體電容分析模型。同時分析元件參數對AC交流的Kink Effect之影響，討論電容變化與該效應之間的關連性。Abstract Have proposed exchanging analysing in effect (Kink Effect ) DC direct current and AC that the electric current of the electric crystal of the low-temperature polycrystalline silicon membrane uprushes in this thesis. And present trend chapter one in the future to the technology of the display, the effect that introduce the electric crystal component structure and electric current of low-temperature polycrystalline silicon membrane and uprush briefly. Propose one can supply power way simulation spend , analyse models with physics basic low-temperature polycrystalline silicon membrane electric crystal electric current. Is it make Cheng component simulation software Tsuprem4 , and two-dimentional component simulation software MEDICI is it analyse component parameter to influence of Kink Effect , DC of direct current to come to utilize. Propose one can supply power way simulation spend, analyse models with the electric electric capacity of crystal of low-temperature polycrystalline silicon membrane with basic physics. Analysing the influence of Kink Effect that the parameter of the component is exchanged to AC at the same time, the ones that discusses the connecting with between electric capacity change and this effect are closed.目錄 第一章 導論 1.1 平面顯示器之市場趨勢 1 1.2 LTPS薄膜電晶體之特性與結構 3 1.3 LTPS薄膜電晶體之五道光罩製造流程 6 1.4 LTPS薄膜電晶體電流特性與Kink Effect 8 1.5 目標 12 第二章 低溫多晶矽薄膜電晶體元件電流突增之直流分析 2.1 簡介 14 2.2 電流特性 15 2.3 模擬討論 20 2.3.1 閘極電壓 參數變動 21 2.3.2 晶粒邊界陷阱濃度 參數變動 22 2.3.3 載子生命期 參數變動 23 2.3.4 晶粒尺寸 參數變動 24 2.3.5 溫度 參數變動 26 2.3.6 薄膜厚度Thin Film Thickness參數變動 28 2.4 結論 29 第三章 低溫多晶矽薄膜電晶體元件電流突增之交流分析多晶矽 3.1 簡介 31 3.2 電容特性 31 3.3 模擬討論 34 3.3.1 閘極電壓 參數變動 35 3.3.2 晶粒邊界陷阱濃度 參數變動 36 3.3.3 載子生命期 參數變動 37 3.3.4 晶粒尺寸 參數變動 38 3.3.5 溫度 參數變動 40 3.3.6 薄膜厚度Thin Film Thickness參數變動 41 3.4 結論 42 第四章 總結 總結 43 參考文獻 參考文獻 46633944 bytesapplication/pdfen-US低溫多晶矽薄膜電晶體Polysilicon thin film transistor Devices低溫多晶矽薄膜電晶體元件電容特性之分析Analysis of Capacitance Behavior in Polysilicon thin film transistor Devices simulationthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57388/1/ntu-94-R92943122-1.pdf