Lee, M.H.M.H.LeeFan, S.-T.S.-T.FanTang, C.-H.C.-H.TangChen, P.-G.P.-G.ChenChou, Y.-C.Y.-C.ChouChen, H.-H.H.-H.ChenKuo, J.-Y.J.-Y.KuoXie, M.-J.M.-J.XieLiu, S.-N.S.-N.LiuLiao, M.-H.M.-H.LiaoJong, C.-A.C.-A.JongLi, K.-S.K.-S.LiChen, M.-C.M.-C.ChenLiu, C.W.C.W.Liu2019-03-112019-03-112017https://scholars.lib.ntu.edu.tw/handle/123456789/404514Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs10.1109/IEDM.2016.78384002-s2.0-85014440880