T. C. MaY. T. LinT. Y. ChenL. C. ChouHAO-HSIUNG LIN2018-09-102018-09-102007-05https://www.scopus.com/inward/record.uri?eid=2-s2.0-34748851310&doi=10.1109%2fICIPRM.2007.381195&partnerID=40&md5=10e1fa1821295be7f57cdac5bc77ffc1We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in literatures. The lowest energy gap achieved in this study is 0.79 eV. © 2007 IEEE.Antimony; Energy gap; Epilayers; Growth temperature; Molecular beam epitaxy; Nitrogen; Lattice-matching; Semiconducting gallium compoundsconference paper10.1109/iciprm.2007.3811952-s2.0-34748851310WOS:000256504100028