Back gate bias dependent quasi-saturation in a high-voltage SOI MOSFET: 2D analysis and closed-form analytical model

Dept. of Electr. Eng., National Taiwan Univ.Liu, C.M.C.M.LiuKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061994-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032414application/pdf177501 bytesapplication/pdfen-USBack gate bias dependent quasi-saturation in a high-voltage SOI MOSFET: 2D analysis and closed-form analytical modeljournal article10.1109/SOI.1994.514217http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032414/1/00514217.pdf