2013-07-012024-05-15https://scholars.lib.ntu.edu.tw/handle/123456789/665230摘要：本總計畫為提升CIGS太陽電池之整體製程效益與效率，提出以新型複合多層濺鍍製程、新式硒蒸氣硒化製程、共融金屬導入型前驅膜製程、及吸收層/緩衝層模擬製程進行元件製程與特性之改良。透過提出以新型複合式多層濺鍍製程改善金屬前驅膜之平坦性，降低金屬前驅膜之粗糙度並調控薄膜中Ga元素之成份分佈，同時該子計畫將開發新式硒蒸氣硒化反應以及自行設計之硒化反應爐，並透過反應條件之最適化以製備高品質之CIGS光吸收層材料，以達到提升CIGS太陽電池之效率之成效。於中另將開發新型共熔金屬導入光吸收層製程，摻入低熔點金屬降低硒化反應時所需溫度及時間，以開發低溫快速硒化技術進行高品質CIGS薄膜之製備。本計畫為改善緩衝層特性將透過反應溶液組成及反應參數之調整進行成份組成以及於CIGS層上均勻披覆性之調控，以製備具高披覆均勻性與高透光性緩衝層薄膜。結合上述之製程技術與設備之開發，本計畫將為CIGS太陽電池元件之製程提供最優化參數選擇，輔以電腦模擬增進研發速率與成效，製備兼具高效率、低成本之環保型CIGS太陽電池元件。<br> Abstract: Cu(In,Ga)Se2 (CIGS) thin-film solar cells have attracted much attention due to the high conversion efficiency, low cost and potential for large-scale production. With the simulated model for CdS buffer layers and CIGS absorber layers, the novel multi-layer-compsite sputtering process and the co-melting metal introducing process, the selenium-vapor-assisted selenization route will be developed in this project for fabricating CIGS solar cells with high conversion efficiency. The novel multi-layer-composite sputtering process will be employed to deposite Cu-In-Ga precursor films for preparing CIGS absorber layers. The roughness of the deposited metal precursor films will be decreased due to diminishing the aggregation of indium metal. The conditions for the multi-layer-composite sputtering process will be optimized. The photovoltaic performances of the prepared CIGS absorber films will be investigated in detail.The selenium-vapor-assisted selenization process will be developed in this project. In comparison with the conventional selenization process, the low-toxic selenium vapor will be used as a seleniuim source instead of the high-toxic H2Se. The selenization furnaces will be designed and the reaction conditions for the selenium process will be optimized.The co-melting metal introducing process will be developed to prepare CIGS thin films at low selenization temperatures. Introducing the co-melting metal will induce the liquid-phased reaction, leading to facilitate the interdiffusion of the metal precursor films and decrease the required selenization temperatures. The crystalline phase and the microstructures of the co-melting metal introduced CIGS films will be investigated. The characteristics of the buffer layers will be opitimized via tuning the reaction conditions and the composition of reactants. Advanced optical and electrical device characterizations for the buffer layers will be applied to CIGS solar cells for the analysis of the efficiency loss. A one-dimensional CIGS solar-cell device model will be built with extracted device parameters. The model will be applied to verify the physical interpretation and improve the performance of CIGS solar cells.太陽電池銅銦鎵硒高效率solar cellsCIGShigh efficiency