Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

Huang, J.-L.J.-L.HuangWang, L.S.L.S.WangLai, Y.-S.Y.-S.LaiLee, Y.-C.Y.-C.LeeQiu, Z.R.Z.R.QiuLiu, S.S.LiuWuu, D.-S.D.-S.WuuFeng, Z.C.Z.C.FengJIUN-LANG HUANG2020-06-112020-06-112011https://scholars.lib.ntu.edu.tw/handle/123456789/501367[SDGs]SDG7Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor depositionconference paper10.1117/12.8930802-s2.0-80053985451https://www.scopus.com/inward/record.uri?eid=2-s2.0-80053985451&doi=10.1117%2f12.893080&partnerID=40&md5=ed1af94582d453416849a90d0d668e89