Aimi, J.J.AimiYasuda, T.T.YasudaHuang, C.-F.C.-F.HuangYoshio, M.M.YoshioWEN-CHANG CHEN2022-11-162022-11-16202226335409https://www.scopus.com/inward/record.uri?eid=2-s2.0-85128737211&doi=10.1039%2fd1ma01081f&partnerID=40&md5=4421b009247a999eaef778ee7b5eeedahttps://scholars.lib.ntu.edu.tw/handle/123456789/625160Solution-processed organic field-effect transistor (OFET) memory devices are fabricated using a blend film of 6,13-bis(triisopropylsilylethynyl)pentacene and phthalocyanine-cored star-shaped polystyrene. A highly crystalline organic semiconductor thin film was obtained on the star-shaped polymer with charge-trapping sites via a one-pot spin-coating process through vertical phase separation, which is advantageous for OFET memory device applications. The resultant OFET device demonstrated a charge carrier mobility of 0.10 cm2 V−1 s−1 and an on/off current ratio of 106. Upon application of a gate bias, a substantial reversible threshold shift was observed, along with long charge-retention ability, thereby confirming the memory characteristics of the device. © 2022 RSCjournal article10.1039/d1ma01081f2-s2.0-85128737211