Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Huang, T.-H.T.-H.HuangYang, P.-K.P.-K.YangChang, W.-Y.W.-Y.ChangChien, J.-F.J.-F.ChienKang, C.-F.C.-F.KangChen, M.-J.M.-J.ChenHe, J.-H.J.-H.HeMIIN-JANG CHEN2020-05-122020-05-122013https://scholars.lib.ntu.edu.tw/handle/123456789/491760Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memoryjournal article10.1039/c3tc31542h2-s2.0-84887094470https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887094470&doi=10.1039%2fc3tc31542h&partnerID=40&md5=0f0b54215a4324521ecdfa9aec089bef