Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodes

JENN-GWO HWU2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0042091972&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/301814Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodesjournal article10.1109/LED.2003.813365