Chen-Hsiang LingYun-Hsuan KuChun-Ho ChuangYu-Fang ChenChi-Lin MoJing-Jong ShyueMIIN-JANG CHEN2025-01-032025-01-032024-12-24https://www.scopus.com/record/display.uri?eid=2-s2.0-85211599141&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/724529This study investigates the effect of atomic layer annealing (ALA) on the resistive switching characteristics of SiNx-based resistive random access memory (RRAM) devices. The energy transfer occurs in the ALA process via the in situ plasma treatment introduced in each cycle of atomic layer deposition. The ALA treatment reduces nitrogen vacancies and increases the film density of the SiNx layer with a thickness of only 3.5 nm, as revealed by X-ray reflectivity and X-ray photoelectron spectroscopy analyses. Consequently, the SiNx RRAM devices subjected to ALA demonstrate lower operating voltages and improved uniformity in their resistive switching properties. Furthermore, the ALA treatment contributes to a significant enhancement in pulse endurance of over 104 cycles and an exceptional retention time exceeding 106 seconds at 125 °C. This research provides a promising approach to improving the performance of SiNx RRAM devices characterized by low-voltage operation along with high uniformity and reliability.trueatomic layer annealingatomic layer depositionplasma treatmentresistive random access memorysilicon nitrideuniformity and reliabilityjournal article10.1021/acsaelm.4c009682-s2.0-85211599141