Inst. of Electro Opt. Eng., National Taiwan Univ.LUNG-HAN PENGHsu, Y.C.Y.C.HsuLiao, C.H.C.H.LiaoHsu, K.T.K.T.HsuJong, C.S.C.S.JongHuang, C.N.C.N.HuangHo, J.K.J.K.HoChiu, C.C.C.C.ChiuChen, C.Y.C.Y.Chen2007-04-192018-07-052007-04-192018-07-052000-05http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021427https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034545248&doi=10.1109%2fcleo.2000.906972&partnerID=40&md5=a9286a34e9329001a89ff296ea9cf976Photo-chemistry was used to enable a wet oxidation process of GaN in phosphorus acid solutions at room temperature. A reaction-rate limited oxidation process was revealed. Enhancement in the PL and photo-current (PC) response on a GaN was observed.application/pdf250311 bytesapplication/pdfen-USComposition; Energy dispersive spectroscopy; Inorganic acids; Interfaces (materials); Oxidation; Photochemical reactions; Photocurrents; Photoluminescence; Redox reactions; Scanning electron microscopy; Thermal effects; Wetting; Galvanic cell; Oxidation enhanced optical response; Oxide layer thickness; Phosphorus acid; Wet oxidation; Semiconducting gallium compoundsjournal article10.1109/CLEO.2000.9069722-s2.0-0034545248http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021427/1/00906972.pdf