Hsu L.-HKuo C.-TCheng Y.-JChen K.-CKuo H.-CLin S.-YCHIEN-CHUNG LIN2023-06-092023-06-092016https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010660085&doi=10.1364%2fcleo_si.2016.sm4r.7&partnerID=40&md5=e5ce9332f61ee6028b3d3ebfe296a103https://scholars.lib.ntu.edu.tw/handle/123456789/632181An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra. © 2016 OSA.[SDGs]SDG7Gallium compounds; III-V semiconductors; Photodetectors; Photons; Self assembly; High quality; Infrared response; LP-MOCVD; NanoPillar; Photoresponses; Simulated spectra; Indium compoundsconference paper10.1364/cleo_si.2016.sm4r.72-s2.0-85010660085