Lee, Y.-J.Y.-J.LeeHong, T.-C.T.-C.HongHsueh, F.-K.F.-K.HsuehSung, P.-J.P.-J.SungChen, C.-Y.C.-Y.ChenChuang, S.-S.S.-S.ChuangCho, T.-C.T.-C.ChoNoda, S.S.NodaTsou, Y.-C.Y.-C.TsouKao, K.-H.K.-H.KaoWu, C.-T.C.-T.WuYu, T.-Y.T.-Y.YuJian, Y.-L.Y.-L.JianSu, C.-J.C.-J.SuHuang, Y.-M.Y.-M.HuangHuang, W.-H.W.-H.HuangChen, B.-Y.B.-Y.ChenChen, M.-C.M.-C.ChenHuang, K.-P.K.-P.HuangLi, J.-Y.J.-Y.LiChen, M.-J.M.-J.ChenLi, Y.Y.LiSamukawa, S.S.SamukawaWu, W.-F.W.-F.WuHuang, G.-W.G.-W.HuangShieh, J.-M.J.-M.ShiehTseng, T.-Y.T.-Y.TsengChao, T.-S.T.-S.ChaoWang, Y.-H.Y.-H.WangMIIN-JANG CHENJIUN-YUN LI2020-05-122020-05-122017https://scholars.lib.ntu.edu.tw/handle/123456789/491729High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applicationsconference paper10.1109/IEDM.2016.78385352-s2.0-85014428165https://www.scopus.com/inward/record.uri?eid=2-s2.0-85014428165&doi=10.1109%2fIEDM.2016.7838535&partnerID=40&md5=018caa76c7ef891b4aac375abb6abb9f