Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses

Tseng, J.-C.J.-C.TsengHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-44949250062&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/338629Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stressesjournal article10.1109/TED.2008.922489