黃天偉臺灣大學:電信工程學研究所嚴聚川Yen, Chu-ChuanChu-ChuanYen2007-11-272018-07-052007-11-272018-07-052004http://ntur.lib.ntu.edu.tw//handle/246246/58857本論文設計了一個可在基板合成(Substrate-integrated)的共振腔,並將共振腔的負載品質因素(Loaded Quality Factor)設計到400。此共振腔是完全平面的,可以在大量製造的平板電路製程中使用。根據此一高品質因素的共振腔,本論文設計了一個X頻段(X-band)的振盪器。該振盪器之振盪頻率為10 GHz,輸出必v為10 dBm。量測而得的相位雜訊為-110 dBc/Hz @ 100 kHz offset。此相位雜訊比起使用同樣製程的微帶線振盪器(Microstrip Oscillator)在相同的頻率偏移 (Frequency Offset)處低了20dB。此振盪器提供了一個穩定且精巧的頻率源,具有在毫米波(Millimeter Wave)頻段發展的潛力。This thesis presents a design of the substrate-integrated cavity to achieve a high loaded Q-factor of 400. The cavity is fully planar and has the facility in integration. Based on the high-Q substrate-integrated cavity, an X-band oscillator is fabricated and measured with 10 dBm output power at 10 GHz and a phase noise of -110 dBc/Hz at 100 kHz offset from the carrier. Measurements validate the superiority of the cavity oscillator with a 20-dB phase noise improvement at the same frequency offset against the microstrip oscillator in the same process. The cavity oscillator fabricated in this thesis provides a stable and compact frequency source and has the potential to be developed in millimeter wave frequency range.Content Abstract Chapter I Introduction 1 1.1 Motivation 1 1.2 Relative research background 2 1.3 Contribution 4 1.4 Chapter outline 4 Chapter II Surface- integrated cavity resonators 6 2.1 Introduction 6 2.2 Substrate-integrated cavity design 7 2.3 Equivalent circuit model 9 2.4 Quality factor 10 2.4.1 Unloaded quality factor 11 2.4.2 Derivation of elements in the equivalent circuit model 13 2.4.3 Loaded resonate frequency and the loaded quality factor 14 2.5 Impedance design for high loaded Q-factor 16 2.6 Analysis for feeding configurations 17 2.6.1 Feeding configuration of capacitive coupling 17 2.6.2 Feeding configuration of inductive coupling 18 Chapter III Theories of oscillator design 35 3.1 Introduction 35 3.2 Linear analysis of an oscillator 36 3.2.1 One-port negative-resistance oscillators 37 3.2.2 Two-port stability analysis 39 3.3 Analysis using large-signal measurements 40 3.4 Oscillator configurations 42 Chapter IV Design of an oscillator using substrate-integrated cavity 46 4.1 Introduction 46 4.2 Design procedure of the cavity oscillator 47 4.3 Design of an X-band oscillator using a substrate-integrated cavity 48 4.3.1 Design goals 48 4.3.2 Device selection and bias consideration 48 4.3.3 Circuit topology 49 4.3.4 Circuit Schematic 51 4.3.5 Circuit simulation results 52 4.3.6 Measurement results 53 4.4 A microstrip oscillator for comparison 53 4.5 Discussions on measured results 55 Chapter V Conclusions 73 Reference 741148170 bytesapplication/pdfen-US共振腔振盪器基板集成substrate-integrated cavitylow phase noise oscillatorhigh-q使用基板集成共振腔之X頻段振盪器研製Design of an X-band Oscillator Using Substrate-integrated Cavitythesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/58857/1/ntu-93-R91942012-1.pdf