Hsu L.-HCHIEN-CHUNG LINHwang Y.-CSu C.-FLin S.-YKuo H.-C.2023-06-092023-06-092015https://www.scopus.com/inward/record.uri?eid=2-s2.0-84961658133&doi=10.1109%2fPVSC.2015.7355923&partnerID=40&md5=cc5d2dae0e9ab6752f59d9d909447e70https://scholars.lib.ntu.edu.tw/handle/123456789/632167The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%. © 2015 IEEE.Indium compounds; Infrared; nanostructured materials; photodetection devicesEpitaxial growth; Growth temperature; Indium compounds; Infrared radiation; Light absorption; Metallorganic chemical vapor deposition; Nanostructured materials; Optical properties; Organic chemicals; Organometallics; Photodetectors; Semiconductor quantum wells; Blue shift phenomenon; Gallium diffusion; Low growth temperature; Low-pressure metal-organic chemical vapor depositions; Photo detection; Photoluminescence measurements; Residual strains; Strain effect; Gallium nitrideconference paper10.1109/PVSC.2015.73559232-s2.0-84961658133