Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device

I. S. LinV. C. SuJ. B. KuoR. LeeG. S. LinD. ChenC. S. YehC. T. TsaiM. MaJAMES-B KUO2018-09-102018-09-102008-06http://scholars.lib.ntu.edu.tw/handle/123456789/342559Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS devicejournal article10.1109/ted.2008.922858