Ji JZhang GYang SFeng XZhang XCHIH-CHUNG YANG2021-09-022021-09-0220201559128Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85081139382&doi=10.1364%2fAO.387059&partnerID=40&md5=8bfcb418da47c8c046208ec191a5d9cchttps://scholars.lib.ntu.edu.tw/handle/123456789/580687Based on the experimentally demonstrated In content distribution in the InGaN/GaN quantum wells on a two-section GaN nanorod (NR) sidewall, a white-light light-emitting diode (LED) without phosphor is designed and simulated. Following the dependencies of the In diffusion length and incorporation ratio on NR geometric variables of a theoretical model, the height, radius, and tapering section geometry of the GaN NR are designed for controlling the relative intensities of a blue and a yellow emission component to mix into white light. The higher-In upper section of the NR is first excited to emit a relatively stronger yellow component when injection current is low. As the injection current increases, more current spreads into the lower-In lower section, eventually leading to a stronger blue emission component. The proposed NR LED structure provides an alternative solution for phosphor-free white-light generation. ? 2020 Optical Society of AmericaGallium nitride; III-V semiconductors; Indium compounds; Light emission; Nanorods; Phosphors; Alternative solutions; Content distribution; Geometric variables; Incorporation ratio; InGaN/GaN quantum well; Theoretical modeling; White light light-emitting diodes (LED); White-light generation; Light emitting diodesjournal article10.1364/AO.387059322257662-s2.0-85081139382