The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition

Li, J.-Y.J.-Y.LiHuang, C.-T.C.-T.HuangSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84867533831&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/372796The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor depositionjournal article10.1063/1.4757123