The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M.-H.M.-H.LiaoHuang, K.-C.K.-C.HuangSu, W.-J.W.-J.SuChen, S.-C.S.-C.ChenLee, M.-H.M.-H.LeeMING-HAN LIAOWEI-JIUN SU2021-02-042021-02-042020https://www.scopus.com/inward/record.url?eid=2-s2.0-85077771456&partnerID=40&md5=ffccd982869f8a116d40ad82568c34f0https://scholars.lib.ntu.edu.tw/handle/123456789/547500The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter Systemjournal article10.1109/TED.2019.29509812-s2.0-85077771456WOS:000506578900062